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Patent Searching and Data


Title:
SYSTEMS AND METHODS FOR HIGH SENSITIVITY STABLE SENSORS
Document Type and Number:
WIPO Patent Application WO/2020/176223
Kind Code:
A3
Abstract:
Provided is a semiconductor device having a dual gate field-effect transistor and a sensor in electrical communication with the transistor. The field-effect transistor can have a first gate electrode, a second gate electrode, a source electrode, a drain electrode, a semiconductor layer with parts in contact with the source and drain electrodes, a bi-layer gate insulator, and a second gate insulator. The bi-layer gate insulator can include a first layer and a second layer, the first layer located between the second layer and a first side of the semiconductor layer, the second layer located between the first layer and the first gate electrode. The second gate insulator can be located between the second gate electrode and a second side of the semiconductor layer, and the sensor can be in electrical communication with the second gate electrode.

Inventors:
FUENTES-HERNANDEZ, Canek (US)
CHOU, Wen-Fang (US)
JIA, Xiaojia (US)
KIPPELEN, Bernard (US)
Application Number:
US2020/017260
Publication Date:
January 07, 2021
Filing Date:
February 07, 2020
Export Citation:
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Assignee:
GEORGIA TECH RESEARCH CORPORATION (US)
International Classes:
H04N19/44; H04N19/593; G06K9/36
Attorney, Agent or Firm:
WEEKS, Dustin B. et al. (US)
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