Title:
TANTALUM SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2014/136679
Kind Code:
A1
Abstract:
Provided is a tantalum sputtering target that is characterized in that, in the sputter surface thereof, the orientation rate of the (200) plane is 70% or less, the orientation rate of the (222) plane is 10% or more, the average crystal grain size is 50-150 µm, and the variation in crystal grain size is 30 µm or less. Controlling the crystal orientation of the target makes it possible to speed up the sputter rate. As a result, it is possible to form a film having the required thickness in a short period of time, and throughput can thus be improved. In addition, controlling the crystal orientation in the sputter surface of the target has the effect of making it possible to minimize abnormal electrical discharge during sputtering.
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Inventors:
SENDA SHINICHIRO (JP)
NAGATSU KOTARO (JP)
NAGATSU KOTARO (JP)
Application Number:
PCT/JP2014/055075
Publication Date:
September 12, 2014
Filing Date:
February 28, 2014
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; B21B1/22; B21B3/00; C22F1/18; C23C14/14; C22F1/00
Domestic Patent References:
| WO2005045090A1 | 2005-05-19 | |||
| WO2011061897A1 | 2011-05-26 |
Foreign References:
| JPH1180942A | 1999-03-26 | |||
| JP2007530789A | 2007-11-01 | |||
| JP2004107758A | 2004-04-08 | |||
| JP2005045090A | 2005-02-17 | |||
| JPH1180942A | 1999-03-26 | |||
| JP2002363736A | 2002-12-18 | |||
| JP2008532765A | 2008-08-21 | |||
| JP4754617B2 | 2011-08-24 | |||
| JP2011061897A | 2011-03-24 | |||
| JP4714123B2 | 2011-06-29 |
Other References:
See also references of EP 2913423A4
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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