TANTALUM SPUTTERING TARGET, AND PRODUCTION METHOD THEREFOR

Title:

TANTALUM SPUTTERING TARGET, AND PRODUCTION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2016/190159

Kind Code:

A1

Abstract:

When backscattered electron diffraction is used to observe the normal direction ND of the rolling surface, i.e. a cross section orthogonal to the sputtering surface of the target, this tantalum sputtering target has an area ratio of crystal grains of which the {111} plane is oriented in ND of at least 35%. As a result of increasing the straightness of a sputtering material, the present invention addresses the problem of providing a tantalum sputtering target capable of uniformly forming a film of the sputtering material on a wafer surface under high-power sputtering conditions. When such a tantalum target is used to perform sputtering, film thickness uniformity and film formation throughput can be improved, even with regard to fine wiring.

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Inventors:

NAGATSU KOTARO (JP)
SENDA SHINICHIRO (JP)

Application Number:

PCT/JP2016/064537

Publication Date:

December 01, 2016

Filing Date:

May 17, 2016

Export Citation:

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Assignee:

JX NIPPON MINING & METALS CORP (JP)

International Classes:

C23C14/34; B21J1/02; C22C27/02; C22F1/00; C22F1/18

Domestic Patent References:

WO2013080801A1	2013-06-06
WO2009107763A1	2009-09-03

Foreign References:

JP2008532765A	2008-08-21
JP2004107758A	2004-04-08
JP2010535633A	2010-11-25
JP2010535943A	2010-11-25
JP2002530534A	2002-09-17
JP2012507626A	2012-03-29

Other References: