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Patent Searching and Data


Title:
TANTALUM SPUTTERING TARGET, AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2016/190160
Kind Code:
A1
Abstract:
When backscattered electron diffraction is used to observe the normal direction ND of the rolling surface, i.e. a cross section orthogonal to the sputtering surface of the target, this tantalum sputtering target has an area ratio of crystal grains of which the {100} plane is oriented in ND of at least 30%. The present invention addresses the problem of providing a tantalum sputtering target with which the film-formation rate can be suitably controlled under high-power sputtering conditions. When such a tantalum target is used to form a film by way of sputtering, a thin film exhibiting excellent film-thickness uniformity can be formed, and productivity of the thin film formation process can be improved, even with regard to fine wiring.

Inventors:
NAGATSU KOTARO (JP)
SENDA SHINICHIRO (JP)
Application Number:
PCT/JP2016/064538
Publication Date:
December 01, 2016
Filing Date:
May 17, 2016
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; C22C27/02; C22F1/00; C22F1/18
Domestic Patent References:
WO2013080801A12013-06-06
Foreign References:
JP2008532765A2008-08-21
JP2010535633A2010-11-25
JP2010535943A2010-11-25
JP2002530534A2002-09-17
JP2012507626A2012-03-29
Other References:
See also references of EP 3211118A4
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
Isamu Ogoshi (JP)
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