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Title:
TECHNIQUE FOR SUBSTRATE WASHING AFTER CHEMICAL-MECHANICAL PLANARIZATION
Document Type and Number:
WIPO Patent Application WO/2018/030254
Kind Code:
A1
Abstract:
Disclosed is a method for washing a substrate using a washing liquid containing at least any one of the following (A), (B) and (C) after chemical-mechanical planarization of the substrate: (A) a reducing agent having the ability to donate electrons to a metal on the substrate; (B) a deoxidizer for reducing soluble oxygen; and(C) an anti-corrosive agent. Moreover, disclosed are a method for producing a semiconductor device using the foregoing method, a substrate treatment device, and the washing liquid used thereby.

Inventors:
FUKUNAGA Akira (11-1 Haneda Asahi-cho, Ohta-k, Tokyo 10, 〒1448510, JP)
SHIMA Shohei (11-1 Haneda Asahi-cho, Ohta-k, Tokyo 10, 〒1448510, JP)
WADA Yutaka (11-1 Haneda Asahi-cho, Ohta-k, Tokyo 10, 〒1448510, JP)
Application Number:
JP2017/028180
Publication Date:
February 15, 2018
Filing Date:
August 03, 2017
Export Citation:
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Assignee:
EBARA CORPORATION (11-1, Haneda Asahi-cho Ohta-k, Tokyo 10, 〒1448510, JP)
International Classes:
H01L21/304; B24B37/00
Foreign References:
JP2001107089A2001-04-17
JP2008543060A2008-11-27
JP2006066571A2006-03-09
JP2003320323A2003-11-11
JP2002075944A2002-03-15
Attorney, Agent or Firm:
OHNO Seiji et al. (OHNO & PARTNERS, Marunouchi Kitaguchi Building 21F 6-5, Marunouchi 1-chome, Chiyoda-k, Tokyo 05, 〒1000005, JP)
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