Title:
TECHNIQUES AND APPARATUS FOR ANISOTROPIC STRESS COMPENSATION IN SUBSTRATES USING ION IMPLANTATION
Document Type and Number:
WIPO Patent Application WO/2020/073218
Kind Code:
A1
Abstract:
A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.
Inventors:
FALK SCOTT (US)
LU JUN-FENG (CN)
ZHANG QINTAO (US)
LU JUN-FENG (CN)
ZHANG QINTAO (US)
Application Number:
PCT/CN2018/109604
Publication Date:
April 16, 2020
Filing Date:
October 10, 2018
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
LU JUN FENG (CN)
LU JUN FENG (CN)
International Classes:
H01L21/02
Foreign References:
| CN105702564A | 2016-06-22 | |||
| US20040124452A1 | 2004-07-01 | |||
| US20090017387A1 | 2009-01-15 | |||
| US20100155728A1 | 2010-06-24 |
Attorney, Agent or Firm:
LECOME INTELLECTUAL PROPERTY AGENT LTD. (CN)
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