TEMPERATURE SENSOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND TEMPERATURE SENSOR

WIPO Patent Application WO/2011/136294

A1

Disclosed is a temperature sensor element which comprises a thermistor that is configured of an Si-based ceramic and a pair of metal electrodes that are bonded to the surfaces of the thermistor. The metal electrodes contain Cr and a metal element α that has a higher Si diffusion coefficient than Cr. Diffusion layers, wherein silicide of the metal element α is present in the grain boundary of the Si-based ceramic, are formed at respective interfaces between the thermistor and the metal electrodes. A temperature sensor that has heat resistance and bonding reliability and is particularly capable of detecting temperatures over a rage from -50˚C to 1050˚C with high accuracy can be obtained due to the diffusion layers.

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HORI TSUNENOBU (JP)
KUZUOKA KAORU (JP)
OGAWA CHIAKI (JP)
SATOU MOTOKI (JP)
YAMADA KATSUNORI (JP)
KOBAYASHI TAKAO (JP)

PCT/JP2011/060310

November 03, 2011

April 27, 2011

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DENSO CORP (JP)
TOYOTA CHUO KENKYUSHO KK (JP)
HORI TSUNENOBU (JP)
KUZUOKA KAORU (JP)
OGAWA CHIAKI (JP)
SATOU MOTOKI (JP)
YAMADA KATSUNORI (JP)
KOBAYASHI TAKAO (JP)

G01K7/22; H01C7/02

JP2009007206A	2009-01-15
JP3007281B2	2000-02-07
JPH06279122A	1994-10-04
JP2005343768A	2005-12-15
JP2009288023A	2009-12-10
JP2007022893A	2007-02-01
JPS60180968A	1985-09-14
JPS62171979A	1987-07-28

UCS HANDOTAI KIBAN GIJUTSU KENKYUKAI: "Silicon no Kagaku", KABUSHIKI KAISHA RIARAIZU SHA, 28 June 1996 (1996-06-28), pages 1015 - 1016

KIKUCHI, YASUHIRO (JP)
Yasuhiro Kikuchi (JP)

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