Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
TEMPLATE, NITRIDE SEMICONDUCTOR ULTRA-VIOLET LIGHT-EMITTING ELEMENT AND TEMPLATE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2018/216240
Kind Code:
A1
Abstract:
This template comprises a sapphire substrate having as the main surface a (0001) plane or a plane that is slanted by only a predetermined angle with respect to the (0001) plane; and an AlN layer constituted from an AlN crystal formed directly on the main surface of the sapphire substrate with the orientation of the crystal having an epitaxial relationship with respect to the main surface. In this template, in a thickness of 20 nm from the main surface of the AlN layer, the AlN crystal mean particle size is 100 nm or less.

More Like This:
WO/1999/020816METHOD FOR PRODUCING A GALLIUM NITRIDE EPITAXIAL LAYER
WO/1989/009747PROCESS FOR MAKING TRANSITION METAL NITRIDE WHISKERS
JP2009114035GROUP III NITRIDE SEMICONDUCTOR PRODUCTION APPARATUS AND METHOD
Inventors:
HIRANO AKIRA (JP)
NAGASAWA YOSUKE (JP)
Application Number:
PCT/JP2017/035559
Publication Date:
November 29, 2018
Filing Date:
September 29, 2017
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SOKO KAGAKU CO LTD (JP)
International Classes:
C30B29/38; H01L33/32; H01L21/20
Domestic Patent References:
WO2013005789A12013-01-10
WO2013021464A12013-02-14
WO2011077541A12011-06-30
WO2013005789A12013-01-10
Foreign References:
JP2016064928A2016-04-28
US20120291698A12012-11-22
JP2010064911A2010-03-25
JP2006287120A2006-10-19
JP2013211442A2013-10-10
JP2017154964A2017-09-07
JP2009054780A2009-03-12
Other References:
PHYSICA STATUS SOLIDI, vol. A206, no. 6, 2009, pages 1176 - 1182
See also references of EP 3432369A4
Attorney, Agent or Firm:
MASAKI, Yoshifumi (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: RESONATOR

Next Patent: OPTICAL FIBER GUIDE, PHOTOELECTRIC CONVERSION UNIT WITH OPTICAL FIBER, CABLE WITH CONNECTOR, AND MET...