Title:
TEMPLATE SUBSTRATE, ELECTRONIC DEVICE, LIGHT-EMITTING DEVICE, METHOD FOR PRODUCING TEMPLATE SUBSTRATE AND METHOD FOR PRODUCING ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/035274
Kind Code:
A1
Abstract:
This template substrate comprises: a first layer which comprises Alx2Inx1Ga(1-x1-x2)N (0 < x1 < 1 and 0 ≤ x2 < 1) and exhibits lattice relaxation by having a lattice constant a1 in an in-plane direction that is greater than the lattice constant of GaN in an in-plane direction; a second layer which comprises AlyGa(1-y)N (0 ≤ y < 1) and is layered in such a way as to be lattice-matched to the first layer; and a third layer which is provided so as to face the first layer with the second layer being interposed therebetween, is lattice-matched to the second layer, and comprises Alz2Inz1Ga(1-z1-z2)N (0 < z1 < 1 and 0 ≤ z2 < 1).
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Inventors:
TASAI KUNIHIKO (JP)
NAKAJIMA HIROSHI (JP)
KAWANISHI HIDEKAZU (JP)
YANASHIMA KATSUNORI (JP)
NAKAJIMA HIROSHI (JP)
KAWANISHI HIDEKAZU (JP)
YANASHIMA KATSUNORI (JP)
Application Number:
PCT/JP2018/023254
Publication Date:
February 21, 2019
Filing Date:
June 19, 2018
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L33/32; H01L33/12; H01L21/205
Domestic Patent References:
| WO2008153130A1 | 2008-12-18 |
Foreign References:
| JP2016530700A | 2016-09-29 | |||
| JP2006332713A | 2006-12-07 | |||
| US20140332849A1 | 2014-11-13 |
Other References:
SOH, C. B. ET AL.: "Influence of composition pulling effect on the two-dimensional electron gas formed at AlyInxGa1-x-yN/GaN interface", JOURNAL OF APPLIED PHYSICS, 22 November 2005 (2005-11-22), pages 103704-1 - 103704-8, XP012077838
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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