Title:
TERAHERTZ RADIATION SOURCES AND METHODS
Document Type and Number:
WIPO Patent Application WO2004086560
Kind Code:
A3
Abstract:
The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter (202) comprising a semiconductor material (12) ; a pair of electrodes (204a, b) on a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor so as to generate terahertz readiation (210) in said semiconductor by the photoconductive creation of very short (femtosecond) electromagnetic pulses; and a radiation collector (212) to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.
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Inventors:
SHEN YAO-CHUN (GB)
LINFIELD EDMUND HAROLD (GB)
DAVIS ALEXANDER GILES (GB)
LINFIELD EDMUND HAROLD (GB)
DAVIS ALEXANDER GILES (GB)
Application Number:
PCT/GB2004/001261
Publication Date:
December 29, 2005
Filing Date:
March 24, 2004
Export Citation:
Assignee:
UNIV CAMBRIDGE TECH (GB)
UNIV LEEDS (GB)
SHEN YAO-CHUN (GB)
LINFIELD EDMUND HAROLD (GB)
DAVIS ALEXANDER GILES (GB)
UNIV LEEDS (GB)
SHEN YAO-CHUN (GB)
LINFIELD EDMUND HAROLD (GB)
DAVIS ALEXANDER GILES (GB)
International Classes:
G01N21/00; G01N21/35; H01Q1/00; H01Q3/26; H01Q9/28; H01Q19/10; H01L33/00; (IPC1-7): H01Q9/28; G01N21/00; H01Q1/00
Domestic Patent References:
| WO2000075641A1 | 2000-12-14 | |||
| WO2001038929A1 | 2001-05-31 |
Foreign References:
| US5894125A | 1999-04-13 | |||
| US5420595A | 1995-05-30 |
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