Title:
TERMINAL PROTECTION STRUCTURE FOR TRENCH-TYPE SEMICONDUCTOR POWER DEVICE, AND POWER DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/007973
Kind Code:
A1
Abstract:
A terminal protection structure for a trench-type semiconductor power device, and a power device. The power device structure comprises a first conductivity type substrate, a first conductivity type buffer layer, and a first conductivity type drift region, and there is a primitive cell region and a terminal protection region in the first conductivity type drift region; a main voltage-dividing ring, a secondary voltage-dividing ring and a first conductivity type stop ring are arranged outside the primitive cell region; and a second conductivity type shielding protection layer is arranged below the voltage-dividing ring. The structure is characterized in that, a second conductivity type well region is arranged between adjacent voltage-dividing rings; and each voltage-dividing ring and the second conductivity type well region are isolated by the first conductivity type drift region. According to the structure, potential influence between the adjacent voltage-dividing rings can be avoided while a depletion layer is formed to assist voltage endurance, an electric field intensity in an oxidation layer of the voltage-dividing rings is effectively reduced, the voltage endurance capability of the terminal protection structure is improved, the structure is compatible with an original manufacturing process, and the overall performance of the device is improved while keeping the cost unchanged.
Inventors:
LIU SIYANG (CN)
SUN WEIFENG (CN)
WEI JIAXING (CN)
ZHAO HANGBO (CN)
FU HAO (CN)
LU SHENGLI (CN)
SHI LONGXING (CN)
SUN WEIFENG (CN)
WEI JIAXING (CN)
ZHAO HANGBO (CN)
FU HAO (CN)
LU SHENGLI (CN)
SHI LONGXING (CN)
Application Number:
PCT/CN2019/112103
Publication Date:
January 21, 2021
Filing Date:
October 21, 2019
Export Citation:
Assignee:
UNIV SOUTHEAST (CN)
International Classes:
H01L29/06
Foreign References:
| CN108288641A | 2018-07-17 | |||
| CN101969068A | 2011-02-09 | |||
| CN103715232A | 2014-04-09 | |||
| CN109087940A | 2018-12-25 | |||
| CN202534649U | 2012-11-14 | |||
| US20020175383A1 | 2002-11-28 |
Attorney, Agent or Firm:
NANJING SUGAO PATENT AND TRADEMARK FIRM (ORDINARY PARTNERSHIP) (CN)
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