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Patent Searching and Data


Title:
TERNARY MEMORY CELL FOR LOGIC-IN-MEMORY AND MEMORY DEVICE COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2020/226283
Kind Code:
A1
Abstract:
A memory device for logic-in-memory may comprise, according to an example embodiment of the present invention: a cell array comprising a plurality of ternary memory cells; a row decoder for selecting at least one ternary memory cell from among the plurality of ternary memory cells; and a page buffer for providing a first value to the at least one ternary memory cell and latching a third value and/or a second value, the third value being obtained by logically operating the first value and the second value stored in the at least one ternary memory cell. The at least one ternary memory cell may comprise: a first inverter and a second inverter comprising a pull-up element and a pull-down element, which are cross-connected at a first node corresponding to the second value and a second node corresponding to an inverted value of the second value and pass a constant current when turned off; and a P-channel transistor and an N-channel transistor which pass a constant current when turned off, and may comprise a logic operation circuit which outputs the third value.

Inventors:
KIM KYUNG ROK (KR)
JEONG JAE WON (KR)
CHOI YOUNG EUN (KR)
Application Number:
PCT/KR2020/004560
Publication Date:
November 12, 2020
Filing Date:
April 03, 2020
Export Citation:
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Assignee:
ULSAN NAT INST SCIENCE & TECH UNIST (KR)
International Classes:
G11C15/04
Foreign References:
KR101975534B12019-05-07
KR20170090981A2017-08-08
KR101689159B12016-12-23
KR20090010247A2009-01-29
US7567094B22009-07-28
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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