Title:
TEST STRUCTURE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2022/095451
Kind Code:
A1
Abstract:
Provided are a test structure and a method for manufacturing same. The method for manufacturing a test structure comprises: providing a base, and forming, on the base, a gate dielectric film and a conductive film, which are sequentially stacked; at least performing patterning etching on the conductive film, so as to form a plurality of discrete gate structures, which are located on the base, wherein in the arrangement direction of the gate structures, the spacing between adjacent gate structures is less than or equal to 110 nm; forming isolation sidewalls, which are on two opposite sides of the gate structures; and using the gate structures and the isolation sidewalls as masks, and injecting dopant ions into the base, so as to form a doped region, wherein in a direction perpendicular to the surface of the base, the spacing between the doping depth of the doped region and the top face of the base is less than 10 nm.
Inventors:
WANG XIANGYU (CN)
LI NING (CN)
LI NING (CN)
Application Number:
PCT/CN2021/100202
Publication Date:
May 12, 2022
Filing Date:
June 15, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/66
Foreign References:
| CN101459046A | 2009-06-17 | |||
| CN102237276A | 2011-11-09 | |||
| CN103377892A | 2013-10-30 | |||
| KR20080033007A | 2008-04-16 | |||
| CN101452851A | 2009-06-10 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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