Title:
TESTING CIRCUIT AND TESTING METHOD FOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2020/140765
Kind Code:
A1
Abstract:
The present disclosure provides a testing circuit and a testing method for a memory. The memory comprises at least one storage unit comprising a first end and a second end. The testing circuit comprises: a current application unit for providing a constant current to the storage unit, two ends of the current application unit being electrically connected to the first end and the second end respectively; and a voltage reading unit for reading a voltage of the storage unit at the constant current, two ends of the voltage reading unit being electrically connected to the first end and the second end respectively. The current application unit of the testing circuit provides a constant current to the storage unit, such that the storage unit operates at the constant current. The voltage reading unit then reads a voltage of the storage unit at the constant current. In this way, the resistance of the storage unit can be calculated simply by means of the constant current and the read voltage, and said resistance is generated by the storage unit alone, excluding other parasitic resistance in a series connection.
Inventors:
LIU SHAOPENG (CN)
XIONG BAOYU (CN)
XIONG BAOYU (CN)
Application Number:
PCT/CN2019/126747
Publication Date:
July 09, 2020
Filing Date:
December 19, 2019
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
G11C29/50
Foreign References:
| CN104718577A | 2015-06-17 | |||
| CN106531884A | 2017-03-22 | |||
| CN102426859A | 2012-04-25 | |||
| CN108564984A | 2018-09-21 | |||
| US20090225586A1 | 2009-09-10 |
Attorney, Agent or Firm:
KANGXIN PARTNERS, P.C. (CN)
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