Title:
TESTING METHOD FOR RESISTANCE OF CRYSTALLINE SILICON SOLAR CELL TO LIGHT-INDUCED DEGRADATION
Document Type and Number:
WIPO Patent Application WO/2018/192229
Kind Code:
A1
Abstract:
Disclosed in the present invention is a testing method for resistance of a crystalline silicon solar cell to light-induced degradation. The method comprises the following steps: 1) conducting a first conversion efficiency measurement on a crystalline silicon solar cell; 2) injecting, in a specific temperature condition and by means of electric injection, an electric current into the crystalline silicon solar cell; 3) conducting a second conversion efficiency measurement on the crystalline silicon solar cell after the electric injection; 4) calculating an actual light-induced degradation rate of the crystalline silicon solar cell; and 5) comparing the actual light-induced degradation rate against a predetermined acceptable light-induced degradation rate, and if the actual light-induced degradation rate is not greater than the acceptable light-induced degradation rate, then determining that the crystalline silicon solar cell is an acceptable product having acceptable resistance to light-induced degradation, or else determining that the crystalline silicon solar cell is an unacceptable product not having acceptable resistance to light-induced degradation. The present invention enables quick testing of light-induced degradation with low power consumption, thus providing real-time monitoring on a manufacturing process.
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Inventors:
REN CHANGRUI (CN)
FU LIMING (CN)
FU LIMING (CN)
Application Number:
PCT/CN2017/113852
Publication Date:
October 25, 2018
Filing Date:
November 30, 2017
Export Citation:
Assignee:
CHANGZHOU SHICHUANG ENERGY TECH CO LTD (CN)
International Classes:
H01L21/66; H01L31/18
Foreign References:
| CN106910697A | 2017-06-30 | |||
| CN102034897A | 2011-04-27 | |||
| CN104505424A | 2015-04-08 | |||
| CN107068806A | 2017-08-18 |
Attorney, Agent or Firm:
JJS PATENT ATTORNEYS (CN)
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