Title:
TFT SUBSTRATE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/085267
Kind Code:
A1
Abstract:
A TFT substrate (10) and a manufacturing method therefor, the manufacturing method comprising the following steps: providing a substrate (100), and preparing a flexible substrate (110) on the substrate (100) (S100); depositing a barrier layer (120) on the flexible substrate (110) (S200); depositing a gate electrode layer on the barrier layer (120), and etching the gate electrode layer to form gate electrode lines (130), the main material of the gate electrode lines (130) being Al (S300); depositing a gate electrode insulation layer (140) on the barrier layer (120), the gate electrode insulation layer (140) covering the gate electrode lines (130) (S400); forming an active layer (150) on the gate electrode insulation layer (140) (S500); depositing an interlayer insulation layer (160) on the gate electrode insulation layer (140), the interlayer insulation layer (160) covering the active layer (150) (S600); and implementing hydrogenation and activation processing of the active layer (150) (S700).
Inventors:
YU YUN (CN)
Application Number:
PCT/CN2018/071661
Publication Date:
May 09, 2019
Filing Date:
January 05, 2018
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L27/12; H01L21/77; H01L27/32
Foreign References:
| CN106920836A | 2017-07-04 | |||
| CN106252214A | 2016-12-21 | |||
| CN103985637A | 2014-08-13 | |||
| CN103137497A | 2013-06-05 | |||
| US20030183820A1 | 2003-10-02 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
Download PDF: