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Title:
TFT SUBSTRATE, SCANNING ANTENNA COMPRISING TFT SUBSTRATE, AND TFT SUBSTRATE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2018/105520
Kind Code:
A1
Abstract:
A TFT substrate (105) having a source–gate connection (SG) arranged in a non-transmission/reception region (R2). The source–gate connection has: source lower connection wiring (3sg) included in a gate metal layer (3); a first opening (4sg1) formed in a gate insulation layer (4) and reaching the source lower connection wiring; a source bus line connection (7sg) included in a source metal layer (7) and connected to a source bus line (SL); a second opening (11sg1) formed in a first insulating layer (11) and overlapping the first opening when viewed from the normal direction of a dielectric substrate (1); a third opening (11sg2) formed in the first insulating layer and reaching the source bus line connection; a first connection (13sg) including at least one conductive layer formed between the first insulating layer and a second insulating layer, said first connection being connected to the source lower connection wiring inside the first opening and connected to the source bus line connection inside the third opening; fourth openings (17sg1, 17sg2) formed in the second insulation layer (17) and reaching the first connection; and a second connection (19sg) included in an upper conductive layer (19) and connected to the first connection inside the fourth openings.

Inventors:
MISAKI KATSUNORI
Application Number:
PCT/JP2017/043295
Publication Date:
June 14, 2018
Filing Date:
December 01, 2017
Export Citation:
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Assignee:
SHARP KK (JP)
International Classes:
H01L29/786; G02F1/13; G02F1/1333; G02F1/1343; G02F1/1368; H01L21/336; H01Q3/34; H01Q3/44; H01Q13/22; H01Q21/06
Domestic Patent References:
WO2015126550A12015-08-27
Foreign References:
JP2014531843A2014-11-27
JP2009538565A2009-11-05
JP2007295044A2007-11-08
JP2004022635A2004-01-22
JP2011100011A2011-05-19
Attorney, Agent or Firm:
OKUDA Seiji (JP)
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