Title:
THERMAL CVD DEVICE, SIO2 FILM OR SIOF FILM AND METHOD FOR FORMING SAID FILMS
Document Type and Number:
WIPO Patent Application WO/2011/010727
Kind Code:
A1
Abstract:
Provided is a thermal CVD device wherein it is possible to prevent the film quality of SiO2 films or SiOF films from deteriorating by using a raw material gas that does not contain hydrogen. The thermal CVD device is provided with: a chamber (1); a stage (4) which is disposed within the chamber and which holds a substrate (6) whereupon a film is to be formed; a gas shower supplying member (3) which is disposed within the chamber and in a position facing the substrate that is held by the stage; a heating mechanism (5) for heating the substrate held by the stage; a raw material gas supplying mechanism for supplying raw material gas into the chamber; an oxidizing gas supplying mechanism for supplying oxidizing gas into the chamber; and an exhaust mechanism for exhausting the chamber. The raw material gas comprises a Si material that does not contain hydrogen.
Inventors:
HAYAKAWA Haruhito (956-1, Nishi-hirai, Nagareyama-sh, Chiba 56, 〒2700156, JP)
Application Number:
JP2010/062448
Publication Date:
January 27, 2011
Filing Date:
July 23, 2010
Export Citation:
Assignee:
YOUTEC CO., LTD. (956-1, Nishi-hirai Nagareyama-sh, Chiba 56, 〒2700156, JP)
株式会社ユーテック (〒56 千葉県流山市西平井９５６番地の１ Chiba, 〒2700156, JP)
株式会社ユーテック (〒56 千葉県流山市西平井９５６番地の１ Chiba, 〒2700156, JP)
International Classes:
C23C16/42; H01L21/31; H01L21/316
Attorney, Agent or Firm:
YANASE Mutsuyasu et al. (PATENT ATTORNEYS SHINPO, 8th Floor UK Building, 1-32-14, Takadanobaba, Shinjuku-k, Tokyo 75, 〒1690075, JP)
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