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Patent Searching and Data


Title:
THERMAL PROCESSING METHOD AND THERMAL PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/146166
Kind Code:
A1
Abstract:
In this invention, prior to starting the processing of a semiconductor wafer to be initially processed in a lot, a dummy wafer is introduced into a chamber 6, and an atmosphere containing helium gas having high thermal conductivity is formed. By heating the dummy wafer through irradiation of light from a halogen lamp, heat is conducted from the dummy wafer which has risen in temperature to an upper side chamber window and a lower side chamber window through the helium gas which serves as a thermal medium. By the time the semiconductor wafer to be initially processed is introduced into the chamber, the upper side chamber window and the lower side chamber window have been heated, thus allowing the temperature history to be uniform for all the semiconductor wafers constituting the lot and allowing for the omission of a dummy run.

Inventors:
ONO YUKIO (JP)
Application Number:
JP2018/037010
Publication Date:
August 01, 2019
Filing Date:
October 03, 2018
Export Citation:
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Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/265; H01L21/26; H01L21/683
Domestic Patent References:
WO1997022142A11997-06-19
Foreign References:
JPH09156916A1997-06-17
JPH09162124A1997-06-20
JPH07235507A1995-09-05
JP2010225645A2010-10-07
JP2018148178A2018-09-20
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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