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Patent Searching and Data


Title:
THERMOCHEMICAL GAS SENSOR USING THERMOELECTRIC THIN FILM AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2017/171214
Kind Code:
A1
Abstract:
The present invention relates to a thermochemical gas sensor comprising: a substrate having an insulating layer; a seed layer provided above the insulating layer; a thermoelectric thin film provided above the seed layer; an electrode provided above the thermoelectric thin film; a catalyst layer provided above the electrode and inducing an exothermic reaction through contact with gas to be detected; and an electrode line electrically connected with the electrode, wherein the thermoelectric thin film is formed of a material including a chalcogenide, and the chalcogenide is a compound containing at least one chalcogen selected from the group consisting of selenium (Se) and tellurium (Te). According to the present invention, the thermochemical gas sensor can be miniaturized, has a wide detectable concentration zone of gas due to being based on a thermoelectric film, causes no physical/chemical change, such as a phase change, in the thermoelectric film in spite of repetitive exposure to gas, and can detect various desired kinds of gas through a change of the catalyst, which selectively reacts with the gas to be detected.

Inventors:
CHOA YONG HO (KR)
KIM SEIL (KR)
SONG YOSEB (KR)
Application Number:
KR2017/000838
Publication Date:
October 05, 2017
Filing Date:
January 24, 2017
Export Citation:
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Assignee:
INDUSTRY-UNIV COOP FOUND HANYANG UNIV ERICA CAMPUS (KR)
International Classes:
G01N25/32; C25D7/12; C25D11/32; C25D17/00; H01L35/12
Foreign References:
JP2010122106A2010-06-03
KR20140106812A2014-09-04
US20130321008A12013-12-05
JP2007248223A2007-09-27
JP2009042097A2009-02-26
Attorney, Agent or Firm:
KO, Kil-Su (KR)
고길수 (KR)
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