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Patent Searching and Data


Title:
THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION ELEMENT MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/163105
Kind Code:
A1
Abstract:
Provided are the following: a thermoelectric conversion element that has high durability and that can carry out efficient power generation; and a manufacturing method for the thermoelectric conversion element. In the present invention, the following are provided: a first substrate that has in the surface direction a highly thermally conductive part the thermal conduction rate of which is higher than other regions; a first gas barrier layer; a thermoelectric conversion layer formed of silicon; a second gas barrier layer; a second substrate that has in the surface direction a highly thermally conductive part the thermal conduction rate of which is higher than other regions, and that is configured so that in the surface direction the highly thermally conductive part thereof does not completely overlap the highly thermally conductive part of the first substrate; and a pair of electrodes which are connected to the thermoelectric conversion layer so as to sandwich the thermoelectric conversion layer in the surface direction.

Inventors:
HAYASHI NAOYUKI (JP)
YONEKURA OSAMU (JP)
KANO TAKEYOSHI (JP)
AOAI TOSHIAKI (JP)
Application Number:
PCT/JP2015/060488
Publication Date:
October 29, 2015
Filing Date:
April 02, 2015
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L35/32; H01L35/14; H01L35/34; H02N11/00
Foreign References:
JP2006186255A2006-07-13
JP2001044518A2001-02-16
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
Mochitoshi Watanabe (JP)
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