Title:
THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT, AND THERMOELECTRIC CONVERSION MODULE
Document Type and Number:
WIPO Patent Application WO/2019/163807
Kind Code:
A1
Abstract:
This thermoelectric conversion material is characterized by being composed of a sintered body of a compound that contains a dopant, and is also characterized in that the standard deviation of the dopant concentration as calculated by measuring the dopant concentration of each one of a plurality of compound particles observed in a cross-section of the sintered body is 0.15 or less. It is preferable that the compound is composed of one or more compounds which are selected from among MgSi compounds, MnSi compounds, SiGe compounds, MgSiSn compounds and MgSn compounds.
Inventors:
NAKADA YOSHINOBU (JP)
Application Number:
PCT/JP2019/006242
Publication Date:
August 29, 2019
Filing Date:
February 20, 2019
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
H01L35/14; B22F1/00; B22F3/10; C04B35/58; C22C1/04; C22C13/00; C22C23/00; H01L35/34; B22F1/05
Domestic Patent References:
| WO2018012369A1 | 2018-01-18 |
Foreign References:
| JP2017195339A | 2017-10-26 | |||
| JP2017152691A | 2017-08-31 | |||
| JP2018028144A | 2018-02-22 | |||
| JP2013179322A | 2013-09-09 |
Other References:
J TANIH KIDO: "Thermoelectric properties of Sb-doped Mg2Si semiconductors", INTERMETALLICS, vol. 15, 2007, pages 1202 - 1207
See also references of EP 3758080A4
See also references of EP 3758080A4
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
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