Title:
THERMOELECTRIC MATERIAL ELEMENT, POWER GENERATOR, LIGHT SENSOR, AND METHOD FOR MANUFACTURING THERMOELECTRIC MATERIAL ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/171915
Kind Code:
A1
Abstract:
A thermoelectric material element comprising a thermoelectric material part made from a thermoelectric material that includes a first crystal phase and a second crystal phase different from the first crystal phase during operation, a first electrode arranged in contact with the thermoelectric material part, and a second electrode arranged in contact with the thermoelectric material part and apart from the first electrode. The thermoelectric material part includes, during operation, a first temperature region having a first temperature and a second temperature region having a second temperature lower than the first temperature region. The ratio of the first crystal phase to the second crystal phase is greater in the first temperature region than in the second temperature region.
Inventors:
ADACHI MASAHIRO (JP)
KIYAMA MAKOTO (JP)
MATSUURA TAKASHI (JP)
YAMAMOTO YOSHIYUKI (JP)
BYEON DO-GYUN (JP)
TAKEUCHI TSUNEHIRO (JP)
KIYAMA MAKOTO (JP)
MATSUURA TAKASHI (JP)
YAMAMOTO YOSHIYUKI (JP)
BYEON DO-GYUN (JP)
TAKEUCHI TSUNEHIRO (JP)
Application Number:
PCT/JP2019/005647
Publication Date:
September 12, 2019
Filing Date:
February 15, 2019
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
TOYOTA SCHOOL FOUND (JP)
TOYOTA SCHOOL FOUND (JP)
International Classes:
H01L35/26; G01J1/02; H01L35/16; H01L35/34; H02N11/00
Foreign References:
| JP2016506287A | 2016-03-03 | |||
| JP2016534562A | 2016-11-04 | |||
| JP2016526302A | 2016-09-01 | |||
| US20130234375A1 | 2013-09-12 | |||
| US20160049568A1 | 2016-02-18 |
Other References:
XIAO, XINGXING ET AL.: "Phase transition and high temperature thermoelectric properties of copper selenide Cu2_xSe (0?x?0.25", CHINESE PHYSICS B, vol. 20, no. 8, 2011, pages 087201 - 1-087201-8, XP020209205, doi:10.1088/1674-1056/20/8/087201
JIN, MIN ET AL.: "Growth and characterization of large size undoped p-type SnSe single crystal by Horizontal Bridgman method", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 712, 14 April 2017 (2017-04-14) - 25 July 2017 (2017-07-25), pages 857 - 862, XP055636338
JIN, MIN ET AL.: "Growth and characterization of large size undoped p-type SnSe single crystal by Horizontal Bridgman method", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 712, 14 April 2017 (2017-04-14) - 25 July 2017 (2017-07-25), pages 857 - 862, XP055636338
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
Download PDF:
Previous Patent: FEMALE TERMINAL
Next Patent: ROBOT MANAGEMENT SYSTEM, ROBOT MANAGEMENT METHOD, INFORMATION PROCESSING DEVICE, INFORMATION PROCESS...
Next Patent: ROBOT MANAGEMENT SYSTEM, ROBOT MANAGEMENT METHOD, INFORMATION PROCESSING DEVICE, INFORMATION PROCESS...