Title:
THERMOELECTRIC SEMICONDUCTOR MATERIAL AND METHOD OF PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/1990/016086
Kind Code:
A1
Abstract:
A thermoelectric semiconductor material of the invention is constituted of a sinter of a solid solution powder of bismuth telluride (Bi2Te3) - antimony telluride (Sb2Te3) or bismuth telluride (Bi2Te3) - antimony telluride (Sb2Te3) - antimony selenide (Sb2Se3) having a uniform particle size obtained by mixing together bismuth, antimony, tellurium, selenium and impurities of one conductivity type at desired composition, heating and melting the mixture, quenching the mixture to form an ingot thereof, pulverizing it to have a uniform particle size, and sintering it under pressure. Therefore, a thermoelectric element thus formed has high mechanical strengths and good characteristics.
Inventors:
IMAIZUMI HISAAKIRA (JP)
TANIMURA TOSHINOBU (JP)
YAMAGUCHI HIROAKI (JP)
FUKUDA KATSUSHI (JP)
TANIMURA TOSHINOBU (JP)
YAMAGUCHI HIROAKI (JP)
FUKUDA KATSUSHI (JP)
Application Number:
PCT/JP1990/000777
Publication Date:
December 27, 1990
Filing Date:
June 14, 1990
Export Citation:
Assignee:
KOMATSU MFG CO LTD (JP)
International Classes:
H01L35/16; H01L35/34; (IPC1-7): H01L35/16; H01L35/18
Foreign References:
| JPS6477184A | 1989-03-23 | |||
| JPS6437456A | 1989-02-08 | |||
| JPS642379A | 1989-01-06 | |||
| JPH01106478A | 1989-04-24 |
Other References:
See also references of EP 0476134A4
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