Title:
THIN-FILM BULK ACOUSTIC RESONATOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/062364
Kind Code:
A1
Abstract:
Disclosed in the present application are a thin-film bulk acoustic resonator (FBAR) and a manufacturing method therefor. The manufacturing method comprises: manufacturing a lower electrode on a first surface of an SOI substrate; forming a piezoelectric layer on the first surface and the lower electrode of the SOI substrate; forming a top electrode on the piezoelectric layer; and forming an air cavity on a second surface of the SOI substrate, wherein the second surface and the first surface are opposite to each other. The manufacturing method provided by the present application simplifies the manufacturing process for a FBAR; an AlN thin film grown by the method has high crystal quality, thereby facilitating improvement of device performance; moreover, the frequency of the resonator is adjusted by controlling the thickness of the top silicon by means of the position of separation by implanted oxygen of silicon; the SOI material has the characteristics of low power consumption, high integration density, and anti-radiation property; the present application reduces the complexity of a device manufacturing process and is suitable for a radio frequency front-end for a future 5G communication system.
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Inventors:
ZHANG BAOSHUN (CN)
XU FENG (CN)
YU GUOHAO (CN)
ZHANG XIAODONG (CN)
SHI WENHUA (CN)
XU FENG (CN)
YU GUOHAO (CN)
ZHANG XIAODONG (CN)
SHI WENHUA (CN)
Application Number:
PCT/CN2018/111052
Publication Date:
April 02, 2020
Filing Date:
October 19, 2018
Export Citation:
Assignee:
SUZHOU INST NANO TECH & NANO BIONICS SINANO CAS (CN)
International Classes:
H03H9/17
Foreign References:
| US20040027216A1 | 2004-02-12 | |||
| US20040135144A1 | 2004-07-15 | |||
| JP2005109678A | 2005-04-21 | |||
| CN107222181A | 2017-09-29 | |||
| US20020067106A1 | 2002-06-06 |
Attorney, Agent or Firm:
NANJING LI & FENG INTELLECTUAL PROPERTY AGENCY (SPECIAL GENERAL PARTNERSHIP) (CN)
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