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Title:
THIN-FILM CAPACITOR AND METHOD OF MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/167456
Kind Code:
A1
Abstract:
Provided is a thin-film capacitor 10 in which an upper surface 22a of a lower electrode 22 and an upper surface 30a of a lower insulating layer 30 constitute the same plane. Accordingly, a lower surface 21b of a dielectric film 21 comprises a flat surface throughout the dielectric film 21. In other words, on the lower surface 21b of the dielectric film 21, a step that could cause stress concentration is not formed. Accordingly, in the thin-film capacitor 10, stress concentration in the dielectric film 21 is suppressed. Accordingly, in the thin-film capacitor 10, cracking, chipping and the like due to stress concentration are suppressed and reliability is improved.

Inventors:
OKUZAWA Nobuyuki (2-5-1 Nihonbashi, Chuo-k, Tokyo 28, 〒1036128, JP)
HIROSE Daisuke (2-5-1 Nihonbashi, Chuo-k, Tokyo 28, 〒1036128, JP)
Application Number:
JP2019/001075
Publication Date:
September 06, 2019
Filing Date:
January 16, 2019
Export Citation:
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Assignee:
TDK CORPORATION (2-5-1, Nihonbashi Chuo-k, Tokyo 28, 〒1036128, JP)
International Classes:
H01G4/33; H01G4/30
Domestic Patent References:
WO2017026233A12017-02-16
Foreign References:
JPH0722725A1995-01-24
JP2014222656A2014-11-27
JP2007116177A2007-05-10
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA 9th fl. 1-1, Marunouchi 2-chome, Chiyoda-k, Tokyo 05, 〒1000005, JP)
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