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Patent Searching and Data


Title:
THIN FILM DEPOSITION METHOD USING SILICON PRECURSOR COMPOUND
Document Type and Number:
WIPO Patent Application WO/2012/067455
Kind Code:
A1
Abstract:
The present invention relates to a thin film deposition method for forming a thin film containing silicon on a substrate by supplying a silicon precursor compound in a gaseous state. A silicon precursor compound having a heterocyclic amine group in which ring strains exist is used in a chemical vapor deposition method or an atomic layer deposition, thereby easily forming a thin film, enabling deposition at a low deposition temperature of 100-500 ℃, precisely controlling thickness and composition, and forming a silicon oxide thin film, a silicon nitride thin film or a silicon composite film with a uniform thickness even on a substrate having a complex shape.

Inventors:
KIM JIN SIK (KR)
Application Number:
KR2011/008815
Publication Date:
May 24, 2012
Filing Date:
November 17, 2011
Export Citation:
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Assignee:
UP CHEMICAL CO LTD (KR)
KIM JIN SIK (KR)
International Classes:
C23C16/30; C23C16/448; H01L21/205
Foreign References:
KR20100061733A2010-06-08
KR20080055689A2008-06-19
KR20080027859A2008-03-28
US20080064205A12008-03-13
Attorney, Agent or Firm:
MAPS Intellectual Property Law Firm (KR)
특허법인 엠에이피에스 (KR)
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Claims: