Title:
THIN-FILM DEVICE AND METHOD FOR MANUFACTURING THIN-FILM DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/094835
Kind Code:
A1
Abstract:
A diffusion layer is formed between an insulation substrate and a thin-film buffer layer, and peeling of the thin-film buffer layer is prevented. A thin-film device 1 is provided with: an insulation substrate 2; a thin-film capacitor 5 provided on the insulation substrate 2 interposed by a thin-film buffer layer 4, which is laminated on one main surface of the insulation substrate 2; an insulation and protection layer 6 laminated onto the one main surface of the insulation substrate 2 so as to cover the thin-film capacitor 5; lead-out electrodes 7a, 7b from the thin-film capacitor 5; outer electrodes 8a, 8b; and a surface covering layer 9 for covering the surface of the thin-film device 1. A diffusion layer 3 is formed between the insulation substrate 2 and the thin-film buffer layer 4. The outer electrodes 8a, 8b and the thin-film capacitor 5 are electrically connected via the lead-out electrodes 7a, 7b. The diffusion layer 3 is an amorphous layer formed between an SiO2 oxidized layer on the surface of the insulation substrate 2 and the thin-film buffer layer 4, at least one type of element among the constituent elements of the SiO2 oxidized layer and the thin-film buffer layer 4 diffusing in said diffusion layer 3.
Inventors:
ASHIMINE TOMOYUKI (JP)
SHINDO SATOSHI (JP)
TAKESHIMA YUTAKA (JP)
SHINDO SATOSHI (JP)
TAKESHIMA YUTAKA (JP)
Application Number:
PCT/JP2016/085722
Publication Date:
June 08, 2017
Filing Date:
December 01, 2016
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H01G4/33; H01G4/12
Foreign References:
| JP2014090077A | 2014-05-15 | |||
| JP2004214589A | 2004-07-29 | |||
| JPH1093036A | 1998-04-10 |
Attorney, Agent or Firm:
YANASE, Yuji et al. (JP)
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