Title:
THIN FILM DIODE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2010/084534
Kind Code:
A1
Abstract:
A TFD (21) is provided with: a glass substrate (10); a polysilicon layer (12a), which is arranged on the glass substrate (10) and has, on a same flat surface, a P-type semiconductor region (12ap) and an N-type semiconductor region (12an) having impurity ions doped therein, respectively; and an insulating film (13) arranged to cover the polysilicon layer (12a). At least in the P-type semiconductor region (12ap) or in the N-type semiconductor region (12an), the impurity ion concentration in the thickness direction in the polysilicon layer (12a) and the insulating film (13) is maximum on the insulating film (13) side, compared with that at the middle position in the thickness direction of the polysilicon layer (12a).
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Inventors:
KIMURA, Tomohiro (())
Application Number:
JP2009/004123
Publication Date:
July 29, 2010
Filing Date:
August 26, 2009
Export Citation:
Assignee:
SHARP KABUSHIKI KAISHA (22-22, Nagaike-cho Abeno-ku, Osaka-sh, Osaka 22, 〒5458522, JP)
シャープ株式会社 (〒22 大阪府大阪市阿倍野区長池町２２番２２号 Osaka, 〒5458522, JP)
シャープ株式会社 (〒22 大阪府大阪市阿倍野区長池町２２番２２号 Osaka, 〒5458522, JP)
International Classes:
H01L21/329; H01L21/20; H01L21/265; H01L21/8234; H01L27/06; H01L27/08; H01L27/146; H01L29/861; H01L31/10
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (Osaka-Marubeni Bldg, 5-7 Hommachi 2-chome, Chuo-ku, Osaka-sh, Osaka 53, 〒5410053, JP)
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