THIN FILM FORMING METHOD AND QUANTUM DOT DEVICE

WIPO Patent Application WO/2011/074492

A1

In a raw material solution preparation process (11), a raw material solution such as an InP/ZnS dispersed solution is prepared. In a quantum dot dispersed solution preparation process (12), operations are performed wherein an electron transporting surfactant is added to a raw material solution, resulting in the electron transporting surfactant being coordinated on the surfaces of quantum dots (electron transporting surfactant addition treatment (12a)), wherein the resulting solution is vacuum dried, resulting in a dispersed solvent being evaporated (vacuum drying treatment (12b)), wherein subsequently, the resulting solution is immersed in a solvent containing a hole transporting surfactant, with the result that there is prepared a quantum dot dispersed solution such that part of the electron transporting surfactant is replaced by the hole transporting surfactant (ligand replacement treatment (12c)). In an application process (13), the quantum dot dispersed solution is applied to a substrate, with the result that a hole transport layer and a quantum dot layer are prepared simultaneously, leading to a thin film with a two-layer structure being obtained. Due to the above, there is prepared, with high efficiency, a thin film including a quantum dot layer such that two types of surfactants having different functions are coordinated on the surfaces of the quantum dots.

MURAYAMA KOJI (JP)

PCT/JP2010/072233

June 23, 2011

December 10, 2010

Click for automatic bibliography generation  

MURATA MANUFACTURING CO (JP)
MURAYAMA KOJI (JP)

B82B3/00; H01L21/368; H01L29/06

WO2009041596A1	2009-04-02
WO2008104301A2	2008-09-04

JP2005502176A	2005-01-20
JP2008215363A	2008-09-18

KUNIHIRO YASUTOSHI (JP)
Kunihiro Yasutoshi (JP)

View/Download PDF      PDF Help

Previous Patent: ORGANIC LIGHT EMITTING DIODE AND LIGHT EMITTING ELEMENT

Next Patent: ANTHRACENE DERIVATIVE AND LIGHT-EMITTING ELEMENT