THIN FILM TRANSISTOR ARRAY SUBSTRATE - SHENZHEN CHINA STAR OPTOELECT

Title:

THIN FILM TRANSISTOR ARRAY SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2013/029262

Kind Code:

A1

Abstract:

A thin film transistor array substrate, including a plurality of scanning lines (120), data lines (140) and common electrode lines (160) formed on a substrate (100). The plurality of scanning lines (120) and data lines (140) mutually define a plurality of pixel areas (200), a thin film transistor (150) is formed at the interleaved portion thereof, and a plurality of pixel electrodes (220) are formed inside the plurality of pixel areas (200). The thin film transistor array substrate further includes a patterned shield layer (180), wherein the patterned shield layer (108) is disposed under the plurality of data lines (140) in an insulated manner. The patterned shield layer (180) in the present invention can directly shield the backlight (10) and can reduce the area of the black matrix (350) on the CF substrate (300) and improve the aperture ratio.

Inventors:

CHEN SHYHFENG (CN)
SHIH MINGHUNG (CN)
HE HAIYING (CN)

Application Number:

PCT/CN2011/079250

Publication Date:

March 07, 2013

Filing Date:

September 01, 2011

Export Citation:

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Assignee:

SHENZHEN CHINA STAR OPTOELECT (CN)
CHEN SHYHFENG (CN)
SHIH MINGHUNG (CN)
HE HAIYING (CN)

International Classes:

G02F1/1362; G02F1/1368; H01L27/02

Foreign References:

CN101436602A	2009-05-20
JP2010281856A	2010-12-16
CN1379276A	2002-11-13
CN1402538A	2003-03-12
JP2006126729A	2006-05-18
CN101059633A	2007-10-24
JP4530105B2	2010-08-25
TW200931148A	2009-07-16
US7443477B2	2008-10-28

Attorney, Agent or Firm:

ESSEN PATENT & TRADEMARK AGENCY (CN)
深圳翼盛智成知识产权事务所(普通合伙) (CN)

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