Title:
THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2013/166668
Kind Code:
A1
Abstract:
A thin film transistor array substrate and manufacturing method thereof: depositing a first metallic layer on a substrate (111), and utilizing a first photomask for patterning to form a gate electrode (112); depositing a gate insulation layer (113) and a semiconductor layer (114) on the substrate (111), and utilizing a second photomask for patterning to reserve the semiconductor layer (114) located above the gate electrode (112); depositing a transparent conductive layer and a second metallic layer on the substrate (111), utilizing a multi-section adjustment photomask for patterning to form a source electrode (116), a drain electrode (117), and a common electrode (115), and forming a reflective layer (118) on the common electrode (115) by the second metallic layer.
Inventors:
HUANG HUA (CN)
JIA PEI (CN)
JIA PEI (CN)
Application Number:
PCT/CN2012/075241
Publication Date:
November 14, 2013
Filing Date:
May 09, 2012
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
HUANG HUA (CN)
JIA PEI (CN)
HUANG HUA (CN)
JIA PEI (CN)
International Classes:
G02F1/1362; H01L21/77; H01L27/12
Foreign References:
| CN1992290A | 2007-07-04 | |||
| CN1794076A | 2006-06-28 | |||
| CN102148195A | 2011-08-10 | |||
| CN101621039A | 2010-01-06 | |||
| CN1936662A | 2007-03-28 |
Attorney, Agent or Firm:
ESSEN PATENT&TRADEMARK AGENCY (CN)
深圳翼盛智成知识产权事务所(普通合伙) (CN)
深圳翼盛智成知识产权事务所(普通合伙) (CN)
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