Title:
THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/106805
Kind Code:
A1
Abstract:
A thin film transistor (100), comprising a gate electrode (10), a first and second source electrodes (11, 12), a first and second drain electrodes (13, 14), a first and second semiconductor layers (15, 16), and a first and second insulation layers (17, 18); the gate electrode (10) comprises opposite first and second surfaces (101, 102); the first insulation layer (17) is formed on the first surface (101) and covers the first surface (101); the first semiconductor layer (15) is formed on the first insulation layer (17); the first drain electrode (13) and the first source electrode (11) are formed with an interval therebetween on the first semiconductor layer (15); the second insulation layer (18) is formed on the second surface (102) and covers the second surface (102); the second semiconductor layer (16) is formed on the second insulation layer (18); the second drain electrode (14) and the second source electrode (12) are formed with an interval therebetween on the second semiconductor layer (16). The aperture ratio of a display device (500) of an applied thin film transistor (100) is improved. Additionally, further provided are array substrates (200, 300, 400) and a display device (500).
Inventors:
TANG YUEJUN (CN)
Application Number:
PCT/CN2015/070351
Publication Date:
July 07, 2016
Filing Date:
January 08, 2015
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L29/786
Foreign References:
| CN102184968A | 2011-09-14 | |||
| CN101957527A | 2011-01-26 | |||
| CN103367353A | 2013-10-23 | |||
| US5396083A | 1995-03-07 | |||
| JPH01246863A | 1989-10-02 | |||
| JPH08148693A | 1996-06-07 |
Attorney, Agent or Firm:
GUANGZHOU SCIHEAD PATENT AGENT CO.. LTD (CN)
广州三环专利代理有限公司 (CN)
广州三环专利代理有限公司 (CN)
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