Title:
THIN FILM TRANSISTOR, ARRAY SUBSTRATE, FABRICATING METHODS THEREOF, AND DISPLAY APPARATUS
Document Type and Number:
WIPO Patent Application WO/2019/080480
Kind Code:
A1
Abstract:
A thin film transistor may include a gate pattern (11), an active layer pattern (12), a gate insulating layer (13) between the gate pattern (11) and the active layer pattern (12); a first conductive pattern (14) including a first pattern part (141) and a first connecting part (142); a second conductive pattern (15) including a second pattern part (151) and a second connecting part(152); and a first intermediate insulating layer (16) between the first pattern part (141) and the second pattern part (151). The first conductive pattern (14) and the second conductive pattern (15) may be a source pattern and a drain pattern, respectively. A first through hole (161) may be provided on the first intermediate insulating layer (16). The second conductive pattern (15) may be connected to the active layer pattern (12) through the second connecting part (152) in the first through hole (161).
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Inventors:
LI LEI (CN)
FAN JUN (CN)
LI FUQIANG (CN)
LIU TAIYANG (CN)
FAN JUN (CN)
LI FUQIANG (CN)
LIU TAIYANG (CN)
Application Number:
PCT/CN2018/086710
Publication Date:
May 02, 2019
Filing Date:
May 14, 2018
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
ORDOS YUANSHENG OPTOELECTRONICS CO LTD (CN)
ORDOS YUANSHENG OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L29/786; H01L27/12
Foreign References:
| CN106158882A | 2016-11-23 | |||
| CN107611181A | 2018-01-19 | |||
| CN207303112U | 2018-05-01 | |||
| US20130300968A1 | 2013-11-14 |
Other References:
See also references of EP 3701569A4
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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