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Patent Searching and Data


Title:
THIN-FILM TRANSISTOR BACK PANEL AND FABRICATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/169737
Kind Code:
A1
Abstract:
A thin-film transistor back panel and a fabrication method therefor. The thin-film transistor back panel comprises: a substrate (1); a gate electrode (11) and a first metal electrode (21) formed on the substrate (1); a gate electrode insulating layer (3) that is formed on the substrate (1) and that covers the gate electrode (11) and the first metal electrode (21), wherein the thickness of the gate electrode insulating layer (31) on the first metal electrode (21) is smaller than the thickness of the gate electrode insulating layer (32) on the gate electrode (11); an etching block layer (5) located on the gate electrode insulating layer (31) and a second metal electrode (22) located on the etching block layer (5). Only part of the gate electrode insulating layer (3) deposited on the first metal electrode (21) is etched away, and the first metal electrode (21) is continuously protected by the gate electrode insulating layer (31) thereabove. Therefore, the first metal electrode (21) will not be damaged by an etching gas (34), being beneficial for the stable performance of the ultimately formed storage capacitor (2), improving the stability of the thin-film transistor back panel, and reducing the occurrence of defects.

Inventors:
ZHANG LIANGFEN (CN)
ZHANG XIAOXING (CN)
Application Number:
PCT/CN2018/087315
Publication Date:
September 12, 2019
Filing Date:
May 17, 2018
Export Citation:
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Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L27/12; H01L21/77
Foreign References:
CN104752344A2015-07-01
CN103943628A2014-07-23
US20100227442A12010-09-09
CN104752345A2015-07-01
CN103928470A2014-07-16
CN102945828A2013-02-27
KR20030057770A2003-07-07
Attorney, Agent or Firm:
SHENZHEN RONDA PATENT AND TRADEMARK LAW OFFICE (CN)
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