Title:
THIN FILM TRANSISTOR, CONTACT STRUCTURE, SUBSTRATE, DISPLAY DEVICE, AND PROCESSES FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2011/151970
Kind Code:
A1
Abstract:
Disclosed is a TFT (17) provided on a substrate (3). The TFT (17) includes a gate electrode (31), a gate insulator film (32), a semiconductor (33), a source electrode (34), a drain electrode (35), and a protective film (36). The semiconductor (33) is made of a metal oxide semiconductor, and has a source section (33a) that is in contact with the source electrode (34), a drain section (33b) that is in contact with the drain electrode (35), and a channel section (33c) that is exposed from the source electrode (34) and the drain electrode (35). An electroconductive layer (37) having a relatively small electrical resistance is formed on each of the source section (33a) and the drain section (33b). The electroconductive layer (37) is removed in the channel section (33c).
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Inventors:
NAKAZAWA MAKOTO
Application Number:
PCT/JP2011/002484
Publication Date:
December 08, 2011
Filing Date:
April 27, 2011
Export Citation:
Assignee:
SHARP KK (JP)
NAKAZAWA MAKOTO
NAKAZAWA MAKOTO
International Classes:
H01L29/786; H01L21/336
Foreign References:
| JP2008042088A | 2008-02-21 | |||
| JP2008141113A | 2008-06-19 | |||
| JP2009528670A | 2009-08-06 | |||
| JP2007116119A | 2007-05-10 | |||
| JP2008040343A | 2008-02-21 |
Other References:
See also references of EP 2579315A4
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (JP)
Hiroshi Maeda (JP)
Hiroshi Maeda (JP)
Download PDF:
Claims:
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