Title:
THIN-FILM TRANSISTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2013/057766
Kind Code:
A1
Abstract:
This organic thin-film transistor device (10) is provided with: gate electrode wiring (102a) formed in a first region on a substrate (101); a first signal wiring layer (102b) formed in a second region; a gate insulation film (103) formed in such a manner as to cover the gate electrode wiring (102a) and the first signal wiring layer (102b); a partition layer formed on the gate insulation film (103); a second signal wiring layer (110) formed on the partition layer above the first signal wiring layer (102b); a drain electrode (108) and source electrode wiring (109) formed in the partition layer and openings where at least part of the partition layer above the second region is open; an organic semiconductor layer formed in at least an opening, as a partition for the partition layer, drain electrode (108) and source electrode wiring (109); and a protective film (112) formed in such a manner as to cover the organic semiconductor layer (111), as a partition for the drain electrode (108) and the source electrode wiring (109).
Inventors:
UKEDA TAKAAKI
MIYAMOTO AKIHITO
MIYAMOTO AKIHITO
Application Number:
PCT/JP2011/005885
Publication Date:
April 25, 2013
Filing Date:
October 20, 2011
Export Citation:
Assignee:
PANASONIC CORP (JP)
UKEDA TAKAAKI
MIYAMOTO AKIHITO
UKEDA TAKAAKI
MIYAMOTO AKIHITO
International Classes:
H01L29/786; H01L21/336
Foreign References:
| JP2011086927A | 2011-04-28 | |||
| JP2007171314A | 2007-07-05 | |||
| JP2010079225A | 2010-04-08 | |||
| JP2008153688A | 2008-07-03 | |||
| JP2001244467A | 2001-09-07 | |||
| JP2005227538A | 2005-08-25 | |||
| JP2002359374A | 2002-12-13 | |||
| JP2009021477A | 2009-01-29 |
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house Extensive 守 (JP)
New house Extensive 守 (JP)
Download PDF:
Claims: