Title:
THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2020/066287
Kind Code:
A1
Abstract:
The present invention suppresses deterioration of reliability and characteristics of a transistor which includes an oxide semiconductor as an active layer. This thin-film transistor has: an active layer that is made of an oxide semiconductor including at least indium and gallium; an electrode layer that has an aluminum layer and that is partially formed on the active layer; and an interlayer insulating layer that is formed on the active layer, wherein the peak value of chlorine concentration at the interface between the interlayer insulating layer and the active layer is 2.0 × 1019 [atoms/cm3] or less, and the peak value of an aluminum concentration is 1.0 × 1020 [atoms/cm3] or less.
Inventors:
TODA TATSUYA (JP)
TSUBUKU MASASHI (JP)
TSUBUKU MASASHI (JP)
Application Number:
PCT/JP2019/030205
Publication Date:
April 02, 2020
Filing Date:
August 01, 2019
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
International Classes:
H01L21/336; H01L21/28; H01L27/32; H01L29/417; H01L29/786; H01L51/50
Foreign References:
| JP2013138188A | 2013-07-11 | |||
| JP2016157881A | 2016-09-01 | |||
| JP2013168642A | 2013-08-29 | |||
| JP2013138184A | 2013-07-11 |
Attorney, Agent or Firm:
HARUKA PATENT & TRADEMARK ATTORNEYS (JP)
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