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Title:
THIN FILM TRANSISTOR, DISPLAY SUBSTRATE, DISPLAY PANEL, AND METHOD OF FABRICATING THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2019/134313
Kind Code:
A1
Abstract:
A thin film transistor having an active layer (ACT) is provided. The active layer (ACT) includes a source electrode contact part (11), a drain electrode contact part (12), and a channel part (C) between the source electrode contact part (11) and the drain electrode contact part (12). The channel part (c) includes at least a first portion (13) and a second portion (14) different from the first portion (13). The second portion (14) has an enhanced ability to capture off-state leaking carriers as compared to the first portion (13).

Inventors:
WANG, Jun (No. 9 Dize Rd, BDA, Beijing 6, 100176, CN)
HUANG, Zhonghao (No. 9 Dize Rd, BDA, Beijing 6, 100176, CN)
ZHAO, Yongliang (No. 9 Dize Rd, BDA, Beijing 6, 100176, CN)
RIM, Seungmoo (No. 9 Dize Rd, BDA, Beijing 6, 100176, CN)
Application Number:
CN2018/085433
Publication Date:
July 11, 2019
Filing Date:
May 03, 2018
Export Citation:
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Assignee:
BOE TECHNOLOGY GROUP CO., LTD. (No. 10 Jiuxianqiao Rd, Chaoyang District, Beijing 5, 100015, CN)
CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. (No. 7 Yunhan Rd, Shuitu Hi-tech Industrial Zone Beibei District, Chongqing 4, 400714, CN)
International Classes:
H01L29/06; H01L21/336; H01L29/786
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CHEN, Yuan10th Floor, Tower D, Minsheng Financial Center,28 Jianguomennei Avenue, Dongcheng District, Beijing 5, 100005, CN)
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