THIN FILM TRANSISTOR, DISPLAY SUBSTRATE, DISPLAY PANEL, AND METHOD OF FABRICATING THIN FILM TRANSISTOR

Title:

THIN FILM TRANSISTOR, DISPLAY SUBSTRATE, DISPLAY PANEL, AND METHOD OF FABRICATING THIN FILM TRANSISTOR

Document Type and Number:

WIPO Patent Application WO/2019/134313

Kind Code:

A1

Abstract:

A thin film transistor having an active layer (ACT) is provided. The active layer (ACT) includes a source electrode contact part (11), a drain electrode contact part (12), and a channel part (C) between the source electrode contact part (11) and the drain electrode contact part (12). The channel part (c) includes at least a first portion (13) and a second portion (14) different from the first portion (13). The second portion (14) has an enhanced ability to capture off-state leaking carriers as compared to the first portion (13).

Inventors:

WANG JUN (CN)
HUANG ZHONGHAO (CN)
ZHAO YONGLIANG (CN)
RIM SEUNGMOO (CN)

Application Number:

PCT/CN2018/085433

Publication Date:

July 11, 2019

Filing Date:

May 03, 2018

Export Citation:

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Assignee:

BOE TECHNOLOGY GROUP CO LTD (CN)
CHONGQING BOE OPTOELECTRONICS TECH CO LTD (CN)

International Classes:

H01L29/06; H01L21/336; H01L29/786

Foreign References:

US20150287837A1	2015-10-08
CN105789317A	2016-07-20
CN101383290A	2009-03-11
CN107482065A	2017-12-15
CN107482066A	2017-12-15