Title:
THIN-FILM TRANSISTOR AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/189002
Kind Code:
A1
Abstract:
This thin-film transistor comprises: a substrate; a metal oxide layer provided on the substrate; an oxide semiconductor layer provided in contact with the metal oxide layer and having crystallinity; a gate electrode provided so as to overlap the oxide semiconductor layer; and an insulating layer provided between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer contains a plurality of crystal grains, each including at least one of crystal orientation <001>, crystal orientation <101>, and crystal orientation <111> obtained by a electron backscatter diffraction (EBSD) method.
Inventors:
WATAKABE HAJIME (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
KAWASHIMA EMI (JP)
TSURUMA YUKI (JP)
SASAKI DAICHI (JP)
TSUBUKU MASASHI (JP)
SASAKI TOSHINARI (JP)
TAMARU TAKAYA (JP)
KAWASHIMA EMI (JP)
TSURUMA YUKI (JP)
SASAKI DAICHI (JP)
Application Number:
PCT/JP2023/006035
Publication Date:
October 05, 2023
Filing Date:
February 20, 2023
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
IDEMITSU KOSAN CO (JP)
IDEMITSU KOSAN CO (JP)
International Classes:
H01L21/363; H01L21/336; H01L29/786
Domestic Patent References:
| WO2018143073A1 | 2018-08-09 |
Foreign References:
| JP2012253315A | 2012-12-20 |
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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