Title:
THIN FILM TRANSISTOR, FABRICATION METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/152644
Kind Code:
A1
Abstract:
A thin film transistor and a fabricating method thereof as well as an array substrate and a display device are provided. The thin film transistor (1) includes a substrate (10), a source electrode (15) and a drain electrode (16) on the substrate (10), an active layer (11) on the source and drain electrodes, a gate insulating layer (12) on the active layer (11), and a gate electrode (13) on the gate insulating layer (12). The active layer (11) extends from the source electrode (15) towards the drain electrode (16) along a non-linear path.
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Inventors:
LIU ZHENG (CN)
LI XIAOLONG (CN)
HUANG FU LUJIANG (CN)
LI XIAOLONG (CN)
HUANG FU LUJIANG (CN)
Application Number:
PCT/CN2016/105065
Publication Date:
September 14, 2017
Filing Date:
November 08, 2016
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L29/786; G02F1/1368; H01L21/336; H01L27/12
Foreign References:
| CN105655407A | 2016-06-08 | |||
| US5567958A | 1996-10-22 | |||
| CN102782822A | 2012-11-14 | |||
| US20160043233A1 | 2016-02-11 | |||
| JPH06216390A | 1994-08-05 |
Other References:
See also references of EP 3427302A4
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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