Title:
THIN FILM TRANSISTOR AND FABRICATION METHOD THEREFOR, ARRAY SUBSTRATE AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/088368
Kind Code:
A1
Abstract:
A thin film transistor, comprising: an active layer disposed on a substrate and a source and drain that make electrical contact with the active layer, wherein the source and drain each comprise a first sub-electrode and a second sub-electrode that are stacked, and the first sub-electrodes are close to the active layer relative to the second sub-electrodes; the area of an overlapping region of an orthographic projection on the substrate of the second sub-electrode of at least one among the source and drain and the active layer is smaller than the area of an overlapping region of an orthographic projection on the substrate of the first sub-electrode of at least one among the source and drain and the active layer.
Inventors:
CAO BINBIN (CN)
Application Number:
PCT/CN2019/113338
Publication Date:
May 07, 2020
Filing Date:
October 25, 2019
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/786; H01L21/336; H01L27/12; H01L29/417
Foreign References:
| CN109390413A | 2019-02-26 | |||
| CN203312302U | 2013-11-27 | |||
| CN106997903A | 2017-08-01 | |||
| CN101090123A | 2007-12-19 | |||
| CN101764065A | 2010-06-30 | |||
| US20030124851A1 | 2003-07-03 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
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