Title:
THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR AND IMAGE DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/039272
Kind Code:
A1
Abstract:
[Problem] To provide a method for manufacturing a thin film transistor with high efficiency and high stability by transistor element isolation. [Solution] To provide a thin film transistor characterized by having a substrate, a gate electrode laminated on the substrate, a gate insulator layer laminated on the substrate and the gate electrode, a recess provided on the gate insulator layer, a semiconductor layer formed in the recess of the gate insulator layer, and a source electrode and a drain electrode connected to the semiconductor layer at positions spaced apart from each other.
Inventors:
MURATA KODAI (JP)
Application Number:
PCT/JP2011/070131
Publication Date:
March 29, 2012
Filing Date:
September 05, 2011
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD (JP)
MURATA KODAI (JP)
MURATA KODAI (JP)
International Classes:
H01L21/336; G09F9/30; H01L29/786; H01L51/05
Foreign References:
| JP2010135772A | 2010-06-17 | |||
| JP2007250842A | 2007-09-27 | |||
| JPH09139508A | 1997-05-27 | |||
| JP2006186293A | 2006-07-13 |
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Claims: