THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE AND DISPLAY DEVICE

WIPO Patent Application WO/2016/033981

A1

A thin film transistor and a manufacturing method therefor, an array substrate and a display device. The thin film transistor comprises an active layer, an etching barrier layer, a source electrode and a drain electrode. The etching barrier layer is arranged on the active layer, and multiple via holes are formed in the etching barrier layer. The source electrode and the drain electrode are arranged on the etching barrier layer, the source electrode comprises at least two sub-source electrodes, and the drain electrode comprises at least two sub-drain electrodes. The sub-source electrodes and the sub-drain electrodes form at least two sub-switches that are connected in parallel, each sub-switch comprises one sub-source electrode and one sub-drain electrode, and one sub-source electrode and one sub-drain electrode are electrically connected to the active layer through the via holes in the etching barrier layer respectively. By adoption of a multichannel design, the problem of a DGS caused by deficiency of the active layer is solved by using multiple sub-switches that are connected in parallel, and accordingly the normal operation of pixels is guaranteed, the defect-free rate of the product is increased, and the service life of the product is prolonged.

CAI ZHENFEI (CN)
CHEN ZHENGWEI (CN)

PCT/CN2015/077361

March 10, 2016

April 24, 2015

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BOE TECHNOLOGY GROUP CO LTD (CN)
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO LTD (CN)

H01L21/336; H01L29/786; H01L27/12

CN104218095A	2014-12-17
CN103489923A	2014-01-01
CN102916051A	2013-02-06
CN103811503A	2014-05-21
US20130264564A1	2013-10-10
US20030119232A1	2003-06-26

CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
中科专利商标代理有限责任公司 (CN)

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