Title:
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, DISPLAY SUBSTRATE AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/123931
Kind Code:
A1
Abstract:
A thin film transistor having a groove structure with an increased width-to-length ratio, manufacturing method thereof, and display substrate and display device comprising the thin film transistor. The thin film transistor comprises a gate electrode (110), a gate insulating layer (120) and an active layer (130) stacked on a base substrate (100); the active layer (130) is formed with a source electrode region, a drain electrode region and a groove region; at least a part of a surface of the active layer (130) facing toward the gate insulating layer (120) is a non-planar surface in the groove region, such that the non-planar surface of the active layer (130) has a zigzag shape in a width direction of the groove region.
Inventors:
ZHAO NA (CN)
XU XUFEI (CN)
SHI GAOFEI (CN)
XU XUFEI (CN)
SHI GAOFEI (CN)
Application Number:
PCT/CN2015/085281
Publication Date:
August 11, 2016
Filing Date:
July 28, 2015
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
HEFEI BOE OPTOELECTRONICS TECH (CN)
HEFEI BOE OPTOELECTRONICS TECH (CN)
International Classes:
H01L29/786; H01L21/336; H01L29/10
Foreign References:
| CN104576761A | 2015-04-29 | |||
| CN102945807A | 2013-02-27 | |||
| CN103824780A | 2014-05-28 | |||
| CN202282354U | 2012-06-20 | |||
| CN103762218A | 2014-04-30 | |||
| CN102437196A | 2012-05-02 | |||
| CN103199112A | 2013-07-10 | |||
| US20050041169A1 | 2005-02-24 |
Other References:
See also references of EP 3076437A4
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (No. 87 West 3rd Ring North Rd.,Haidian District, Beijing 9, CN)
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