Title:
THIN-FILM TRANSISTOR, MANUFACTURING METHOD, AND ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2017/148176
Kind Code:
A1
Abstract:
The present disclosure provides a thin-film transistor having a plurality of carbon nanotubes in its active layer, its manufacturing method, and an array substrate. The manufacturing method as such comprises: forming an insulating layer to at least substantially cover a channel region of the active layer between a source electrode and a drain electrode of the thin-film transistor, wherein the insulating layer is configured to substantially insulate from an environment, and have substantially little influence on, the plurality of carbon nanotubes in the active layer.
Inventors:
LIANG XUELEI (CN)
HUI GUANBAO (CN)
XIA JIYE (CN)
ZHANG FANGZHEN (CN)
TIAN BOYUAN (CN)
YAN QIUPING (CN)
PENG LIANMAO (CN)
HUI GUANBAO (CN)
XIA JIYE (CN)
ZHANG FANGZHEN (CN)
TIAN BOYUAN (CN)
YAN QIUPING (CN)
PENG LIANMAO (CN)
Application Number:
PCT/CN2016/104884
Publication Date:
September 08, 2017
Filing Date:
November 07, 2016
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
UNIV BEIJING (CN)
UNIV BEIJING (CN)
International Classes:
H01L27/12; H01L21/336; H01L29/786
Foreign References:
| CN105679676A | 2016-06-15 | |||
| CN105280717A | 2016-01-27 | |||
| TW200824051A | 2008-06-01 | |||
| JP2006049459A | 2006-02-16 | |||
| US20150364706A1 | 2015-12-17 | |||
| CN101710588A | 2010-05-19 |
Other References:
LIANG SHIBO ET AL.: "APPLIED PHYSICS LETTERS", vol. 105, 11 August 2014, A I P PUBLISHING LLC, article "High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide", pages: 1 - 4
DING LI ET AL.: "Self-Aligned U-Gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering", ACS NANO, vol. 5, no. 4, 11 March 2011 (2011-03-11), pages 2512 - 2519, XP055844572, DOI: 10.1021/nn102091h
See also references of EP 3424071A4
DING LI ET AL.: "Self-Aligned U-Gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering", ACS NANO, vol. 5, no. 4, 11 March 2011 (2011-03-11), pages 2512 - 2519, XP055844572, DOI: 10.1021/nn102091h
See also references of EP 3424071A4
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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