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Title:
THIN-FILM TRANSISTOR AND MANUFACTURING METHOD, ARRAY SUBSTRATE AND MANUFACTURING METHOD, DISPLAY PANEL, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/186094
Kind Code:
A1
Abstract:
The invention discloses a manufacturing method manufacturing a thin-film transistor, and comprising: preparing and forming on a substrate (10) a gate (11), a gate insulation layer (12), an active layer (13), a source (14) and a drain (15); and preparing and forming, by means of a solution method, the active layer (13), wherein the active layer (13) is made of an indium zirconium oxide material. Also disclosed are a thin-film transistor, an array substrate and manufacturing method, a display panel, and a display device.

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Inventors:
YAN LIANGCHEN (CN)
YUAN GUANGCAI (CN)
XU XIAOGUANG (CN)
WANG LEI (CN)
PENG JUNBIAO (CN)
LAN LINFENG (CN)
Application Number:
PCT/CN2017/081858
Publication Date:
November 02, 2017
Filing Date:
April 25, 2017
Export Citation:
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Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
UNIV SOUTH CHINA TECH (CN)
International Classes:
H01L21/84; H01L21/34; H01L29/24; H01L29/786
Foreign References:
CN105914150A2016-08-31
CN104952914A2015-09-30
CN101580345A2009-11-18
US20080245266A12008-10-09
CN102945828A2013-02-27
CN103779427A2014-05-07
CN103839970A2014-06-04
CN102543754A2012-07-04
CN101794819A2010-08-04
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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