Title:
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/040287
Kind Code:
A1
Abstract:
Provided is a thin film transistor. An anti-damage layer (30) is provided between an active layer (10) and a source electrode (20) of the thin film transistor; and an anti-damage layer (30) is provided between the active layer (10) and a drain electrode (40). The thin film transistor is simple in structure. By means of providing an anti-damage layer (30) between an active layer (10) and a source electrode (20) of the thin film transistor and providing an anti-damage layer (30) between the active layer (10) and a drain electrode (40) of the thin film transistor, the channel length can be effectively reduced, and a parasitic capacitance between the source electrode (20) and a gate electrode (70) and a parasitic capacitance between the drain electrode (40) and the gate electrode (70) can be reduced.
Inventors:
ZHAI YUHAO (CN)
Application Number:
PCT/CN2016/105433
Publication Date:
March 08, 2018
Filing Date:
November 11, 2016
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L29/786; H01L21/336; H01L29/06
Foreign References:
| CN1797161A | 2006-07-05 | |||
| CN105789327A | 2016-07-20 | |||
| CN102646699A | 2012-08-22 | |||
| CN103489921A | 2014-01-01 |
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
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