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Title:
THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2018/054122
Kind Code:
A1
Abstract:
A method for manufacturing a thin-film transistor is provided, including: forming an active layer (20) over a substrate (10), and performing oxidation treatment to a channel region (23) of the active layer for controlling a carrier concentration in the channel region of the active layer. The active layer having a high carrier concentration is directly formed, and the oxidation treatment can be configured to reduce a carrier concentration of the channel region of the active layer to a level where a gating property of the thin-film transistor is still maintained. In the thin-film transistor manufactured thereby, there is a relatively small contact resistance between a source electrode (61) and a source electrode region (21) of the active layer and between the drain electrode (62) and the drain electrode region (22) of the active layer.

Inventors:
WANG GUOYING (CN)
CHEN JIANGBO (CN)
SONG ZHEN (CN)
Application Number:
PCT/CN2017/090779
Publication Date:
March 29, 2018
Filing Date:
June 29, 2017
Export Citation:
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Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L21/336; H01L29/786
Foreign References:
CN106128963A2016-11-16
CN102157565A2011-08-17
CN102122620A2011-07-13
CN103325840A2013-09-25
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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