Title:
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/209736
Kind Code:
A1
Abstract:
The present invention relates to the technical field of display panels, and in particular to a thin film transistor and a manufacturing method therefor. The thin film transistor is disposed on a substrate and comprises a drain electrode (310), a source electrode (410), a gate electrode (40), and an active layer (50). The drain electrode (310) and the source electrode (410) both are comb-shaped. The drain electrode (310) and the source electrode (410) are connected to the active layer (50) respectively through a first via hole (3112) and a second via hole (4112). Such a configuration can increase the width of a channel between the drain electrode (310) and the source electrode (410) and reduce the layout size of the thin film transistor, thus achieving the purpose of saving space. When used for a GOA circuit or other circuits, the thin film transistor is advantageous to design a narrow frame display panel.
Inventors:
ZENG MIAN (CN)
CHEN SHU JHIH (CN)
CHEN SHU JHIH (CN)
Application Number:
PCT/CN2017/087368
Publication Date:
November 22, 2018
Filing Date:
June 07, 2017
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L29/786; H01L21/336
Foreign References:
| CN106128944A | 2016-11-16 | |||
| CN202142535U | 2012-02-08 | |||
| CN102437196A | 2012-05-02 | |||
| CN105140300A | 2015-12-09 | |||
| US20130252431A1 | 2013-09-26 |
Attorney, Agent or Firm:
YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)
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